Staff -- Semiconductor International, 4/14/2009 Sp3 Diamond Technologies Inc. is taking orders for 2 and 4 in. silicon-on-diamond (SOD) wafers for use in production of high-power ICs. The company is accelerating development of 6 in. wafers for use as laterally diffused metal oxide semiconductor (LDMOS) substrates. The SOD wafers, which have top layers of GaN compounds, deliver higher thermal conductivity at a lower cost than existing SiC alternatives to GaN. More
Saturday, May 2, 2009
Sp3 Diamond Revs SOD Wafer Production
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