Soitec Ready With Ultrathin SOI Wafers

David Lammers, News Editor -- Semiconductor International, 7/16/2008

Soitec has qualified silicon-on-insulator (SOI) wafers with ultrathin buried oxide (BOX) and silicon layers. The SOI wafers -- named XUT+ to describe the ultrathin top silicon and BOX layers -- are aimed at both partially depleted (PD) and fully depleted (FD) devices, including multi-gate transistor architectures, such as finFET and trigate, that may play a role at 22 nm and beyond. More

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