2009 IITC to Consider Metals for 22 nm

TOP STORY... May 4, 2009

Researchers at the International Interconnect Technology Conference (IITC), planned for June 1-3 in Sapporo, Japan, will present new metallization and processing schemes for contacts, barrier layers, wetting agents and copper silicides. The Sapporo IITC meeting will feature studies of copper contacts, ruthenium nitride barriers and CVD ruthenium wetting agents, among others.
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