IMEC has achieved its next milestone with EUV lithography, creating the first functional 22 nm CMOS SRAM cells with technology. Both the contact and Metal 1 layer were imaged with ASML's full-field EUV demo tool.
Aaron Hand, Executive Editor, Electronic Media -- Semiconductor International, 4/22/2009 10:44:00 AM
IMEC (Leuven, Belgium) has achieved its next milestone with extreme ultraviolet (EUV) lithography, creating the first functional 22 nm CMOS SRAM cells with the technology. Both the contact and Metal 1 layer were imaged with ASML's full-field EUV alpha demo tool (ADT). The cells were made with finFETs, and the ultra-small circuit structures were deposited with advanced tools from Applied Materials.
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| IMEC patterned this 22 nm SRAM array with EUV lithography, shown here after Metal 1 patterning and etch. |
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