2009 VLSI Technology Symposium Takes Up Heterogeneous IC Challenges

TOP STORY... April 22, 2009

At the 2009 Symposium on VLSI Technology, set for June in Kyoto, Japan, researchers will present progress on germanium channel PFETs and III-V-based NFETs, which could be mixed with silicon-based transistors in heterogeneous solutions. The time for first introduction of heterogeneous ICs -- based on germanium or SiGe PFET channels and later, III-V NFETs -- may be only a few years off, perhaps as early as the 22 nm node starting in 2012. "We have created really thin layers of SiGe or germanium directly on silicon, and we see excellent performance," said Raj Jammy, director of Sematech's front-end program. 
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