Friday, June 26, 2009

Ulvac Rolls PECVD for Tandem PV Cells

TOP STORY...

Ulvac CIMFrom Semiconductor International.
Ulvac Inc. has developed a PECVD system aimed at tandem junction PV cells. The CIM-1400 system adds a microcrystalline silicon layer to amorphous silicon thin-film solar cells, boosting cell conversion efficiency. The tool will be incorporated into a turnkey production line for tandem junction thin-film production. more » » » 

Saturday, June 20, 2009

New trends in Wafer Processing


ETSOI DevicesThin SOI Devices Shine at VLSI Symposium
At the 2009 Symposium on VLSI Technology in Kyoto, Japan, an IBM R&D team described fully depleted CMOS devices created on extremely thin silicon-on-insulator (ETSOI) wafers, aimed at the 22 nm node and beyond. A Hitachi team presented SRAMs fabbed on ultrathin buried oxide SOI. Both avoided ion implantation steps. more » » » 
Toshiba Develops High-k/Ge Gate Stack With Strontium Germanide Interlayer
Toshiba developed an ultrathin, equivalent oxide thickness (EOT) scalable high-k/Ge gate stack with strontium germanide (SrGex ) interlayer for the 16 nm node and beyond. more » » » 
MRAMNEC's MRAM Uses Vertical Magnetic Spin
NEC presented a spintronics MRAM cell at the Symposium on VLSI Technology in Kyoto, Japan. The cell uses a vertical magnetic structure that may be scalable to sizes smaller than today's SRAM cells. more » » » 
nFET and pFET transistorsAlliance Members Tout Oxide EOT Advance
Researchers from GlobalFoundries and IBM Research went to the 2009 Symposium on VLSI Technology in Kyoto, Japan, to report progress in reducing the effective oxide thickness (EOT) in the gate stacks for both nFET and pFET devices. The team says it has exceeded EOT and other performance targets set for the 22 nm node. more » » » 
Graphene May Have Advantages Over Copper for Future IC Interconnects
The Georgia Institute of Technology said the unique properties of graphene make the material attractive for a wide range of potential electronic devices. more » » » 
NEC, Toshiba Extend Tech Development Agreements With IBM to 28 nm
NEC Electronics and Toshiba have extended technology development agreements with IBM to participate in the development of a 28 nm, high-k/metal gate, low-power chip technology geared for consumer products. more » » » 
Novellus GapfillNovellus Improves Clean Process for Speed Max Gapfill Tool
Novellus said it has improved the in situ clean steps for its CVD gapfill platform, reducing particles and contaminants significantly. Dielectric films tend to adhere to the process chamber components during the deposition process, and must be removed on a periodic basis. more » » » 
Schiltron330Entrepix Key to Schiltron's Prototypes
Schiltron, a startup with a thin-film transistor 3-D memory architecture, said Entrepix, a CMP technology provider, played a key role in creating prototypes. Entrepix partnered with Schiltron to use CMP in two key process steps of the dual-gate design. more » » » 

New technologies on Semiconductor Tech


Printed electronicsPrinted Electronics Seeing Wide Progress
Executives from an array of printed electronics companies will describe progress in the field at SEMICON West. Materials, equipment and manufacturing processes for printed electronics are a focus at the show, including a July 16 session on Manufacturing Technology for Commercial Printed and Flexible Electronics. more » » » 
MEMSMEMS Markets See Growth Opportunities
The MEMS industry continues to do remarkably well compared with the IC industry because it is so highly diversified. While automotive, industrial pressure sensing and inkjet head markets are struggling, new medical and portable system markets are growing rapidly. more » » » 
Cima NanoTech makes a flexible transparent conductive film with silver nanoparticles.Nanoelectronics Edge Into Production
Graphene and spin wave transistors are among the technologies that look interesting for next-generation FETs. Near term, nanoelectronics products are entering commercial production. At SEMICON West, nanoelectronics challenges are part of the show's Extreme Electronics series on emerging technologies. more » » » 
MRAMNEC's MRAM Uses Vertical Magnetic Spin
NEC presented a spintronics MRAM cell at the Symposium on VLSI Technology in Kyoto, Japan. The cell uses a vertical magnetic structure that may be scalable to sizes smaller than today's SRAM cells. more » » » 
WattsFlexibleSID: Flexible Displays Are on Their Way
New displays aimed at E-books and other portable products were at center stage at the Society of Information Displays (SID) conference. Electrophoretic displays used for E-book applications are seeking to move to color, while flexible ultrathin AMOLED displays are adopting a multilayer stack approach to improve lifetimes. more » » » 

Thursday, June 18, 2009

NEC's MRAM Uses Vertical Magnetic Spin

TOP STORY...

MRAMfrom Semiconductor International...
NEC presented a spintronics MRAM cell at the Symposium on VLSI Technology in Kyoto, Japan. The cell uses a vertical magnetic structure that may be scalable to sizes smaller than today's SRAM cells. more » » » 

Tuesday, June 16, 2009

SID: Flexible Displays Are on Their Way

TOP STORY... 

WattsFlexiblefrom Semoconductor International
New displays aimed at E-books and other portable products were at center stage at the Society of Information Displays (SID) conference. Electrophoretic displays used for E-book applications are seeking to move to color, while flexible ultrathin AMOLED displays are adopting a multilayer stack approach to improve lifetimes. more » » » 

NEWS FROM THE WORLD OF MATERIALS

Visit the Materials360® Plus and the Materials News pages on the MRS Website for continually updated research news and features

Image in Focus

    
    Credit: Adam Jakus, Georgia Institute of Technology

Pollenesian Serenity
Multiple species of bare and alumina coated pollen particle images obtained via SEM.

(One of three first place winners of the the Science as Art competition at the 2009 MRS Spring Meeting. Submitted by Adam Jakus, Georgia Institute of Technology
)

Nano Focus

Tunable bandgap engineered in bilayer graphene 
Graphene has no bandgap which greatly limits its uses in nanoscale electronics and photonics. Researchers have now been able to engineer a bandgap in bilayer graphene that can be precisely controlled from 0 to 250 meV. The experiment was conducted at room temperature, requiring no refrigeration of the device. Among the applications made possible by this breakthrough are new kinds of nanotransistors and – because of its narrow bandgap – nano-LEDs and other nanoscale optical devices in the infrared range.

A billion-year hard drive?
Scientists have described a technique of placing a single nanosized iron crystal inside a hollow carbon nanotube. Like diamonds, nanotubes are among the most stable structures in existence. Once inserted into the tubes, the iron nanocrystals act as data bits, physically sliding from one end of the tube to the other in response to an electric current and in the process registering either a "1" or a "0" in the binary language of computers, forming the basis of long lasting data storage.

Materials in Focus

Polymer membrane filters arsenic from water 
A new polymer membrane material has been developed that resists problems such as fouling or clogging while also screening out arsenic. The material is based on polymers, hexafluoro alcohols, that are used as a patterning material for manufacturing advanced computer chips. The researchers found that these compounds also make good water filters. The key to the membrane's performance is its pH sensitivity. At high pH, arsenic in the water becomes charged, and the fluorine groups on the polymer, which also become charged, then will repel the toxic chemical.

Thinnest superconducting metal created 
A superconducting sheet of lead only two atoms thick, the thinnest superconducting metal layer ever created, has been developed by researchers. One of the innovative properties of the new sheet is that it confines the electrons to move in two dimensions, or one "quantum channel." Uniquely, the lead remains a good superconductor despite the constrained movement of the electrons through the metal.

Mineral could be evidence of naturally occurring quasicrystal 
A team of researchers says it has found in a Russian mineral sample the first natural example of a quasicrystal. Numerous versions have been cooked up in the laboratory, but a natural example would indicate that nature's products are more diverse than previously thought. But the origin of such would-be minerals is a point of some contention among petrologists, since aluminum alloys do not form easily by natural processes, because the element reacts with oxygen so readily. The possibility that the quasicrystal and its related materials, including khatyrkite, are of man-made origin needs to be weighed very carefully.

Thursday, June 4, 2009

IMEC Changes Leadership, Broadens Scope

TOP STORY... June 3, 2009

Luc Van den hove was named CEO at IMEC, taking over the role held by Gilbert Declerck for the past decade. Under Declerck's leadership, IMEC has played a key role in IC R&D while developing technology in new areas such as photovoltaics and biomedical electronics. "Under Gilbert's management, IMEC has grown into an internationally renowned institute with solid partnerships around the world," Van den hove said. 
Read more >>


Intel Puts Mobile MPUs in Ultrathin Package

Business Wire, 6/2/2009

At Compudex this week, Intel introduced four new processors, "all in a slim, sleek package," said Mooly Eden, vice president and general manager of the Mobile Platforms Group at Intel. More

Tuesday, June 2, 2009

Entrepix Key to Schiltron's Prototypes

TOP STORY... June 1, 2009

Schiltron, a startup with a thin-film transistor 3-D memory architecture, said Entrepix, a CMP technology provider, played a key role in creating prototypes. Entrepix partnered with Schiltron to use CMP in two key process steps of the dual-gate design. 
Read more >>

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